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FDD86567-F085 Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part FDD86567-F085
Description N-Channel Power MOSFET
Feature FDD86567-F085 N-Channel PowerTrench® MO SFET FDD86567-F085 N-Channel PowerTren ch® MOSFET 60 V, 100 A, 3.
2 mΩ Featu res „ Typical RDS(on) = 2.
6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A „ UIS Ca pability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Managemen t „ Solenoid and Motor Drivers „ Inte grated Starter/Alternator „ Primary Sw itch for 12V Systems D D G G S DTO- P-2A5K2 (TO-252) S MOSFET Maximum Ra tings TJ = 25°C unless otherwise noted .
Symbol Parameter VDSS VGS ID Drai n-to-Source Voltage Gate-to-S .
Manufacture ON Semiconductor
Datasheet
Download FDD86567-F085 Datasheet
Part FDD86567-F085
Description N-Channel Power MOSFET
Feature FDD86567-F085 N-Channel PowerTrench® MO SFET FDD86567-F085 N-Channel PowerTren ch® MOSFET 60 V, 100 A, 3.
2 mΩ Featu res „ Typical RDS(on) = 2.
6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A „ UIS Ca pability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Managemen t „ Solenoid and Motor Drivers „ Inte grated Starter/Alternator „ Primary Sw itch for 12V Systems D D G G S DTO- P-2A5K2 (TO-252) S MOSFET Maximum Ra tings TJ = 25°C unless otherwise noted .
Symbol Parameter VDSS VGS ID Drai n-to-Source Voltage Gate-to-S .
Manufacture ON Semiconductor
Datasheet
Download FDD86567-F085 Datasheet

FDD86567-F085

FDD86567-F085
FDD86567-F085

FDD86567-F085

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