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FDD86567-F085 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | FDD86567-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDD86567-F085 N-Channel PowerTrench® MO SFET
FDD86567-F085
N-Channel PowerTren ch® MOSFET
60 V, 100 A, 3. 2 mΩ Featu res Typical RDS(on) = 2. 6 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A UIS Ca pability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Managemen t Solenoid and Motor Drivers Inte grated Starter/Alternator Primary Sw itch for 12V Systems D D G G S DTO- P-2A5K2 (TO-252) S MOSFET Maximum Ra tings TJ = 25°C unless otherwise noted . Symbol Parameter VDSS VGS ID Drai n-to-Source Voltage Gate-to-S . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDD86567-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDD86567-F085 N-Channel PowerTrench® MO SFET
FDD86567-F085
N-Channel PowerTren ch® MOSFET
60 V, 100 A, 3. 2 mΩ Featu res Typical RDS(on) = 2. 6 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A UIS Ca pability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Managemen t Solenoid and Motor Drivers Inte grated Starter/Alternator Primary Sw itch for 12V Systems D D G G S DTO- P-2A5K2 (TO-252) S MOSFET Maximum Ra tings TJ = 25°C unless otherwise noted . Symbol Parameter VDSS VGS ID Drai n-to-Source Voltage Gate-to-S . |
| Manufacture | ON Semiconductor |
| Datasheet |
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