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NTBS2D7N06M7 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NTBS2D7N06M7 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | NTBS2D7N06M7
N‐Channel PowerTrench) M OSFET
60 V, 110 A, 2. 7 mW Features • Typical RDS(on) = 2. 2 mW at VGS = 10 V , ID = 80 A • Typical Qg(tot) = 80 nC at VGS = 10 V, ID = 80 A • UIS Capab ility • These Devices are Pb−Free a nd are RoHS Compliant Applications • Industrial Motor Drive • Industrial Power Supply • Industrial Automation • Battery Operated Tools • Battery Protection • Solar Inverters • UPS and Energy Inverters • Energy Storage • Load Switch ABSOLUTE MAXIMUM RATI NGS (TJ = 25°C, Unless otherwise noted ) Rating Symbol Value Unit Drain−t o−Source Voltage VDSS 60 V Gate to−Source V . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NTBS2D7N06M7 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | NTBS2D7N06M7
N‐Channel PowerTrench) M OSFET
60 V, 110 A, 2. 7 mW Features • Typical RDS(on) = 2. 2 mW at VGS = 10 V , ID = 80 A • Typical Qg(tot) = 80 nC at VGS = 10 V, ID = 80 A • UIS Capab ility • These Devices are Pb−Free a nd are RoHS Compliant Applications • Industrial Motor Drive • Industrial Power Supply • Industrial Automation • Battery Operated Tools • Battery Protection • Solar Inverters • UPS and Energy Inverters • Energy Storage • Load Switch ABSOLUTE MAXIMUM RATI NGS (TJ = 25°C, Unless otherwise noted ) Rating Symbol Value Unit Drain−t o−Source Voltage VDSS 60 V Gate to−Source V . |
| Manufacture | ON Semiconductor |
| Datasheet |
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