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FDB86366-F085 Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part FDB86366-F085
Description N-Channel Power MOSFET
Feature FDB86366-F085 N-Channel PowerTrench® MO SFET FDB86366-F085 N-Channel PowerTren ch® MOSFET 80 V, 110 A, 3.
6 mΩ Featu res „ Typical RDS(on) = 2.
8 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A „ UIS Ca pability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Managemen t „ Solenoid and Motor Drivers „ Inte grated Starter/Alternator „ Primary Sw itch for 12V Systems D D G GS TO-2 63 S FDB SERIES MOSFET Maximum Ratin gs TJ = 25°C unless otherwise noted.
Symbol Parameter VDSS VGS ID Drain-t o-Source Voltage Gate-to-Sour .
Manufacture ON Semiconductor
Datasheet
Download FDB86366-F085 Datasheet
Part FDB86366-F085
Description N-Channel Power MOSFET
Feature FDB86366-F085 N-Channel PowerTrench® MO SFET FDB86366-F085 N-Channel PowerTren ch® MOSFET 80 V, 110 A, 3.
6 mΩ Featu res „ Typical RDS(on) = 2.
8 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A „ UIS Ca pability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Managemen t „ Solenoid and Motor Drivers „ Inte grated Starter/Alternator „ Primary Sw itch for 12V Systems D D G GS TO-2 63 S FDB SERIES MOSFET Maximum Ratin gs TJ = 25°C unless otherwise noted.
Symbol Parameter VDSS VGS ID Drain-t o-Source Voltage Gate-to-Sour .
Manufacture ON Semiconductor
Datasheet
Download FDB86366-F085 Datasheet

FDB86366-F085

FDB86366-F085
FDB86366-F085

FDB86366-F085

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