N-Channel Power MOSFET
FDB86366-F085 N-Channel PowerTrench® MOSFET
FDB86366-F085
N-Channel PowerTrench® MOSFET
80 V, 110 A, 3.6 mΩ
Features
...
Description
FDB86366-F085 N-Channel PowerTrench® MOSFET
FDB86366-F085
N-Channel PowerTrench® MOSFET
80 V, 110 A, 3.6 mΩ
Features
Typical RDS(on) = 2.8 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101
Applications
Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switch for 12V Systems
D
D
G
GS
TO-263
S
FDB SERIES
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol
Parameter
VDSS VGS
ID
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
Power Dissipation
PD
Derate Above 25oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
TC = 25°C TC = 25°C
(Note 2)
(Note 3)
Ratings 80 ±20 110
See Figure 4 178 176 1.2
-55 to + 175 0.85 43
Units V V
A
mJ W W/oC oC oC/W oC/W
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 87uH, IAS = 64A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface presented here is
of the based
drain pins. RθJC is on mounting on a 1
guaranteed by design, in2 pad of 2oz copper.
while...
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