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FDB86366-F085 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | FDB86366-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDB86366-F085 N-Channel PowerTrench® MO SFET
FDB86366-F085
N-Channel PowerTren ch® MOSFET
80 V, 110 A, 3. 6 mΩ Featu res Typical RDS(on) = 2. 8 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Ca pability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Managemen t Solenoid and Motor Drivers Inte grated Starter/Alternator Primary Sw itch for 12V Systems D D G GS TO-2 63 S FDB SERIES MOSFET Maximum Ratin gs TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-t o-Source Voltage Gate-to-Sour . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDB86366-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDB86366-F085 N-Channel PowerTrench® MO SFET
FDB86366-F085
N-Channel PowerTren ch® MOSFET
80 V, 110 A, 3. 6 mΩ Featu res Typical RDS(on) = 2. 8 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Ca pability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Managemen t Solenoid and Motor Drivers Inte grated Starter/Alternator Primary Sw itch for 12V Systems D D G GS TO-2 63 S FDB SERIES MOSFET Maximum Ratin gs TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-t o-Source Voltage Gate-to-Sour . |
| Manufacture | ON Semiconductor |
| Datasheet |
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