FDMC8878

FDMC8878 N-Channel POWERTRENCH) MOSFET 30 V, 16.5 A, 14 mW This N−Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications. Features RDS(on) = 14 mW (Max.) @ VGS = 10 V, ID = 9.6 A RDS(on) = 17 mW (Max.) @ VGS = 4.5 V, ID = 8.7 A Low Profile − 0.8 mm Max in MLP 3.3 x 3.3 These Devices are Pb−Free and are RoHS Compliant Application DC − DC Conversion MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDS Gate−to−Source Voltage VGS Continuous Drain Current TC = 25°C ID (Package limited) 30 V ±20 V 16.5 A TC = 25°C 38 (Silicon limited) TA = 25°C 9.6 (Figure 1) Drain Current Power Dissipation Pulsed TC = 25°C TA = 25°C (Figure 1) ID 60 A PD 31 W 2.1 Operating and Storage Junction Temperature Range TJ, TSTG − 55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient (Figure 1) Symbol RqJC RqJA Value 4 60 Unit °C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package FDMC8878 FDMC8878 MLP 3.3 x 3.3 www.onsemi.com D G S WDFN8 CASE 511DH D5 D6 D7 D8 4G 3S 2S 1S ORDERING INFORMATION See deta...