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FDMC8878 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
 
 
 
Part | FDMC8878 |
---|---|
Description | N-Channel Power MOSFET |
Feature | FDMC8878
N-Channel POWERTRENCH) MOSFET
30 V, 16. 5 A, 14 mW This N−Channel MO SFET is a rugged gate version of ON Sem iconductor’s advanced PowerTrench pro cess. It has been optimized for power m anagement applications. Features • RD S(on) = 14 mW (Max. ) @ VGS = 10 V, ID = 9. 6 A • RDS(on) = 17 mW (Max. ) @ VGS = 4. 5 V, ID = 8. 7 A • Low Profile ∠’ 0. 8 mm Max in MLP 3. 3 x 3. 3 • These Devices are Pb−Free and are RoHS Com pliant Application • DC − DC Conver sion MAXIMUM RATINGS (TA = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDS Gate−to−Source Voltage VGS Cont . |
Manufacture | ON Semiconductor |
Datasheet |
Part | FDMC8878 |
---|---|
Description | N-Channel Power MOSFET |
Feature | FDMC8878
N-Channel POWERTRENCH) MOSFET
30 V, 16. 5 A, 14 mW This N−Channel MO SFET is a rugged gate version of ON Sem iconductor’s advanced PowerTrench pro cess. It has been optimized for power m anagement applications. Features • RD S(on) = 14 mW (Max. ) @ VGS = 10 V, ID = 9. 6 A • RDS(on) = 17 mW (Max. ) @ VGS = 4. 5 V, ID = 8. 7 A • Low Profile ∠’ 0. 8 mm Max in MLP 3. 3 x 3. 3 • These Devices are Pb−Free and are RoHS Com pliant Application • DC − DC Conver sion MAXIMUM RATINGS (TA = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDS Gate−to−Source Voltage VGS Cont . |
Manufacture | ON Semiconductor |
Datasheet |
 
 
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