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MMBF4416 Datasheet, Equivalent, RF Amplifiers.N-Channel RF Amplifiers N-Channel RF Amplifiers |
| Part | MMBF4416 |
|---|---|
| Description | N-Channel RF Amplifiers |
| Feature | DATA SHEET www. onsemi. com RF Amplifiers , N-Channel MMBF4416 Features • Thi s Device is Designed for RF Amplifiers • Sourced from Process 50 • This is a Pb−Free and Halide Free Device AB SOLUTE MAXIMUM RATINGS (TA = 25°C unle ss otherwise noted. ) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Dr ain−Gate Voltage Gate−Source Voltag e Forward Gate Current Junction and Sto rage Temperature Range 30 V −30 V 10 mA −55 to +150 _C Stresses ex ceeding those listed in the Maximum Rat ings table may damage the device. If an y of these limits are exceeded, device functionality should not be ass . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | MMBF4416 |
|---|---|
| Description | N-Channel RF Amplifiers |
| Feature | DATA SHEET www. onsemi. com RF Amplifiers , N-Channel MMBF4416 Features • Thi s Device is Designed for RF Amplifiers • Sourced from Process 50 • This is a Pb−Free and Halide Free Device AB SOLUTE MAXIMUM RATINGS (TA = 25°C unle ss otherwise noted. ) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Dr ain−Gate Voltage Gate−Source Voltag e Forward Gate Current Junction and Sto rage Temperature Range 30 V −30 V 10 mA −55 to +150 _C Stresses ex ceeding those listed in the Maximum Rat ings table may damage the device. If an y of these limits are exceeded, device functionality should not be ass . |
| Manufacture | ON Semiconductor |
| Datasheet |
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