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MMBF4416 Datasheet, Equivalent, RF Amplifiers.

N-Channel RF Amplifiers

N-Channel RF Amplifiers

 

 

 

Part MMBF4416
Description N-Channel RF Amplifiers
Feature DATA SHEET www.
onsemi.
com RF Amplifiers , N-Channel MMBF4416 Features
• Thi s Device is Designed for RF Amplifiers
• Sourced from Process 50
• This is a Pb−Free and Halide Free Device AB SOLUTE MAXIMUM RATINGS (TA = 25°C unle ss otherwise noted.
) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Dr ain−Gate Voltage Gate−Source Voltag e Forward Gate Current Junction and Sto rage Temperature Range 30 V −30 V 10 mA −55 to +150 _C Stresses ex ceeding those listed in the Maximum Rat ings table may damage the device.
If an y of these limits are exceeded, device functionality should not be ass .
Manufacture ON Semiconductor
Datasheet
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Part MMBF4416
Description N-Channel RF Amplifiers
Feature DATA SHEET www.
onsemi.
com RF Amplifiers , N-Channel MMBF4416 Features
• Thi s Device is Designed for RF Amplifiers
• Sourced from Process 50
• This is a Pb−Free and Halide Free Device AB SOLUTE MAXIMUM RATINGS (TA = 25°C unle ss otherwise noted.
) Symbol Parameter Value Unit VDG VGS IGF TJ, TSTG Dr ain−Gate Voltage Gate−Source Voltag e Forward Gate Current Junction and Sto rage Temperature Range 30 V −30 V 10 mA −55 to +150 _C Stresses ex ceeding those listed in the Maximum Rat ings table may damage the device.
If an y of these limits are exceeded, device functionality should not be ass .
Manufacture ON Semiconductor
Datasheet
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