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FDI9409-F085 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | FDI9409-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDI9409-F085 N-Channel PowerTrench® MOS FET
FDI9409-F085
N-Channel PowerTrench ® MOSFET
40 V, 80 A, 3. 8 mΩ Features „ Typical RDS(on) = 2. 9 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 43 nC at VGS = 10V, ID = 80 A „ UIS Capab ility „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive En gine Control „ PowerTrain Management  „ Solenoid and Motor Drivers „ Integra ted Starter/Alternator „ Primary Switc h for 12V Systems GDS D G I2-PAK S (TO-262) MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Sourc e Voltage Gate-to-Source Volt . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDI9409-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDI9409-F085 N-Channel PowerTrench® MOS FET
FDI9409-F085
N-Channel PowerTrench ® MOSFET
40 V, 80 A, 3. 8 mΩ Features „ Typical RDS(on) = 2. 9 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 43 nC at VGS = 10V, ID = 80 A „ UIS Capab ility „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive En gine Control „ PowerTrain Management  „ Solenoid and Motor Drivers „ Integra ted Starter/Alternator „ Primary Switc h for 12V Systems GDS D G I2-PAK S (TO-262) MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain-to-Sourc e Voltage Gate-to-Source Volt . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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