FDD6530A

FDD6530A FDD6530A 20V N-Channel PowerTrench® MOSFET Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Applications DC/DC converter Motor drives 21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 47 mΩ @ VGS = 2.5 V Low gate charge (6.5 nC typical) Fast switching High performance trench technology for extremely low RDS(ON) . D G S TO-252 D G S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size FDD6530A FDD6530A 13’’ Ratings 20 ±8 21 100 33 3.3 1.6 –55 to +175 4.5 45 96 Tape width 16mm Units V V A W °C °C/W °C/W °C/W Quantity 2500 units ©2001 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publication Order Number: FDD6530A/D FDD6530A Electrical Characteristics Symbol Parameter TA = 25°C...