NTMYS003N08LH

MOSFET - Power, Single N-Channel 80 V, 3.3 mW, 132 A NTMYS003N08LH Features Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK4 Package, Industry Standard These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C 132 A 93 Power Dissipation RqJC (Note 1) TC = 25°C PD TC = 100°C 137 W 68 Continuous Drain Current RqJA (Notes 1, 2, 3) Steady TA = 25°C ID State TA = 100°C 22 A 16 Power Dissipation RqJA (Notes 1, 2) TA = 25°C PD TA = 100°C 3.8 W 1.9 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 9 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 114 A EAS 1211 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 1.1 °C/W Junction−to−Ambient − Steady State ...