| DatasheetsPDF.com |
NVTYS004N04CL Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NVTYS004N04CL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
40 V, 4 . 3 mW, 85 A NVTYS004N04CL Features • Small Footprint (3. 3 x 3. 3 mm) for Com pact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q10 1 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissipa tion State TC = 25°C PD RqJC (Notes 1 . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVTYS004N04CL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
40 V, 4 . 3 mW, 85 A NVTYS004N04CL Features • Small Footprint (3. 3 x 3. 3 mm) for Com pact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q10 1 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissipa tion State TC = 25°C PD RqJC (Notes 1 . |
| Manufacture | ON Semiconductor |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |