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NVTYS004N04CL Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part NVTYS004N04CL
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 40 V, 4 .
3 mW, 85 A NVTYS004N04CL Features
• Small Footprint (3.
3 x 3.
3 mm) for Com pact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• AEC−Q10 1 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissipa tion State TC = 25°C PD RqJC (Notes 1 .
Manufacture ON Semiconductor
Datasheet
Download NVTYS004N04CL Datasheet
Part NVTYS004N04CL
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 40 V, 4 .
3 mW, 85 A NVTYS004N04CL Features
• Small Footprint (3.
3 x 3.
3 mm) for Com pact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• AEC−Q10 1 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissipa tion State TC = 25°C PD RqJC (Notes 1 .
Manufacture ON Semiconductor
Datasheet
Download NVTYS004N04CL Datasheet

NVTYS004N04CL

NVTYS004N04CL
NVTYS004N04CL

NVTYS004N04CL

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