FDS5690

FDS5690 FDS5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process ON that 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V has been especially tailored to minimize on-state RDS(on) = 0.033 Ω @ VGS = 6 V. resistance and yet maintain superior switching performance. Low gate charge (23nC typical). These devices are well suited for low voltage and battery Fast switching speed. powered applications where fast switching are required. low in-line power loss and High performance trench technology for extremely low RDS(ON). Applications High power and current handling capability. DC/DC converter Motor drives D D D D 5 4 6 3 SO-8 G SS S 7 2 8 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range Ratings 60 ±20 7 50 2.5 1.2 1 -55 to +150 Units V V A W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W °C/W Package Outlines and Ordering Information Device Marking Device Reel Size FDS5690 FDS5690 13’’ Tape Width 12mm Quantity 2500 units  2000 Semiconductor Components Industries, LLC...