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NVMYS016N06C Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NVMYS016N06C |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
60 V, 1 6 mW, 33 A
NVMYS016N06C
Features
• S mall Footprint (5x6 mm) for Compact Des ign • Low RDS(on) to Minimize Conduct ion Losses • Low QG and Capacitance t o Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These D evices are Pb−Free and are RoHS Compl iant MAXIMUM RATINGS (TJ = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltag e VGS ±20 V Continuous Drain Curre nt RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady T C = 100°C State TC = 25°C PD TC = 10 . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVMYS016N06C |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
60 V, 1 6 mW, 33 A
NVMYS016N06C
Features
• S mall Footprint (5x6 mm) for Compact Des ign • Low RDS(on) to Minimize Conduct ion Losses • Low QG and Capacitance t o Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These D evices are Pb−Free and are RoHS Compl iant MAXIMUM RATINGS (TJ = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltag e VGS ±20 V Continuous Drain Curre nt RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady T C = 100°C State TC = 25°C PD TC = 10 . |
| Manufacture | ON Semiconductor |
| Datasheet |
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