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NVMYS016N06C Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part NVMYS016N06C
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 60 V, 1 6 mW, 33 A NVMYS016N06C Features
• S mall Footprint (5x6 mm) for Compact Des ign
• Low RDS(on) to Minimize Conduct ion Losses
• Low QG and Capacitance t o Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These D evices are Pb−Free and are RoHS Compl iant MAXIMUM RATINGS (TJ = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltag e VGS ±20 V Continuous Drain Curre nt RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady T C = 100°C State TC = 25°C PD TC = 10 .
Manufacture ON Semiconductor
Datasheet
Download NVMYS016N06C Datasheet
Part NVMYS016N06C
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 60 V, 1 6 mW, 33 A NVMYS016N06C Features
• S mall Footprint (5x6 mm) for Compact Des ign
• Low RDS(on) to Minimize Conduct ion Losses
• Low QG and Capacitance t o Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These D evices are Pb−Free and are RoHS Compl iant MAXIMUM RATINGS (TJ = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltag e VGS ±20 V Continuous Drain Curre nt RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady T C = 100°C State TC = 25°C PD TC = 10 .
Manufacture ON Semiconductor
Datasheet
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NVMYS016N06C

NVMYS016N06C
NVMYS016N06C

NVMYS016N06C

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