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NVMYS4D6N06C Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part NVMYS4D6N06C
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 60 V, 4 .
7 mW, 92 A NVMYS4D6N06C Features
• Small Footprint (5x6 mm) for Compact De sign
• Low RDS(on) to Minimize Conduc tion Losses
• Low QG and Capacitance to Minimize Driver Losses
• AEC−Q10 1 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 1 .
Manufacture ON Semiconductor
Datasheet
Download NVMYS4D6N06C Datasheet
Part NVMYS4D6N06C
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 60 V, 4 .
7 mW, 92 A NVMYS4D6N06C Features
• Small Footprint (5x6 mm) for Compact De sign
• Low RDS(on) to Minimize Conduc tion Losses
• Low QG and Capacitance to Minimize Driver Losses
• AEC−Q10 1 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 1 .
Manufacture ON Semiconductor
Datasheet
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NVMYS4D6N06C

NVMYS4D6N06C
NVMYS4D6N06C

NVMYS4D6N06C

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