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NVMYS4D6N06C Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NVMYS4D6N06C |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
60 V, 4 . 7 mW, 92 A NVMYS4D6N06C Features • Small Footprint (5x6 mm) for Compact De sign • Low RDS(on) to Minimize Conduc tion Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q10 1 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 1 . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVMYS4D6N06C |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
60 V, 4 . 7 mW, 92 A NVMYS4D6N06C Features • Small Footprint (5x6 mm) for Compact De sign • Low RDS(on) to Minimize Conduc tion Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q10 1 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Comp liant MAXIMUM RATINGS (TJ = 25°C unle ss otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Volta ge VGS ±20 V Continuous Drain Curr ent RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 1 . |
| Manufacture | ON Semiconductor |
| Datasheet |
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