FDD86581-F085

FDD86581-F085 N-Channel PowerTrench® MOSFET FDD86581-F085 N-Channel PowerTrench® MOSFET 60 V, 25 A, 15 mΩ Features „ Typical RDS(on) = 12.3 mΩ at VGS = 10V, ID = 25 A „ Typical Qg(tot) = 12.6 nC at VGS = 10V, ID = 25 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter/Alternator „ Distributed Power Architectures and VRM „ Primary Switch for 12V Systems D G G S DTO-P-2A5K2 (TO-252) MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID EAS PD Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Derate Above 25oC TC = 25°C TC = 25°C (Note 2) TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient (Note 3) Ratings 60 ±20 25 See Figure 4 14.5 48.4 0.32 -55 to + 175 3.1 52 D S Units V V A mJ W W/oC oC oC/W oC/W Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 60μH, IAS = 22A, VDD = 60V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface presented here is of the based drain pins. RθJC is on mounting...