FDMA1028NZ

FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. PIN 1 S1 G1 D2 Features „x 3.7 A, 20V. RDS(ON) = 68 m: @ VGS = 4.5V RDS(ON) = 86 m: @ VGS = 2.5V „x Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm „x HBM ESD protection level > 2kV (Note 3) „x RoHS Compliant „ Free from halogenated compounds and antimony oxides D1 D2 S1 1 6 D1 G1 2 5 G2 D1 G2 S2 MicroFET 2x2 D2 3 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDS VGS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Ratings 20 r12 3.7 6 1.4 0.7 –55 to +150 4 S2 Units V V A W qC Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient RTJA Thermal Resistance, Junction-to-Ambient RTJA Thermal Resistance, Junction-to-Ambient RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 (Single Operation) 173 (Si...