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NTTFS6H888N Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | NTTFS6H888N |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 5 5 mW, 13 A
NTTFS6H888N
Features
• S mall Footprint (3. 3 x 3. 3 mm) for Compa ct Design • Low RDS(on) to Minimize C onduction Losses • Low Capacitance to Minimize Driver Losses • These Devic es are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless ot herwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDS S 80 V Gate−to−Source Voltage V GS ±20 V Continuous Drain TC = 25 °C ID Current RqJC (Notes 1, 2, 3, 4) Steady TC = 100°C Power Dissipation State TC = 25°C PD RqJC (Notes 1, 2, 3) TC = 100°C 12 A 8. 3 18 W . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NTTFS6H888N |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 5 5 mW, 13 A
NTTFS6H888N
Features
• S mall Footprint (3. 3 x 3. 3 mm) for Compa ct Design • Low RDS(on) to Minimize C onduction Losses • Low Capacitance to Minimize Driver Losses • These Devic es are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless ot herwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDS S 80 V Gate−to−Source Voltage V GS ±20 V Continuous Drain TC = 25 °C ID Current RqJC (Notes 1, 2, 3, 4) Steady TC = 100°C Power Dissipation State TC = 25°C PD RqJC (Notes 1, 2, 3) TC = 100°C 12 A 8. 3 18 W . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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