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NTTFS6H888N Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part NTTFS6H888N
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 80 V, 5 5 mW, 13 A NTTFS6H888N Features
• S mall Footprint (3.
3 x 3.
3 mm) for Compa ct Design
• Low RDS(on) to Minimize C onduction Losses
• Low Capacitance to Minimize Driver Losses
• These Devic es are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless ot herwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDS S 80 V Gate−to−Source Voltage V GS ±20 V Continuous Drain TC = 25 C ID Current RqJC (Notes 1, 2, 3, 4) Steady TC = 100°C Power Dissipation State TC = 25°C PD RqJC (Notes 1, 2, 3) TC = 100°C 12 A 8.
3 18 W .
Manufacture ON Semiconductor
Datasheet
Download NTTFS6H888N Datasheet
Part NTTFS6H888N
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel 80 V, 5 5 mW, 13 A NTTFS6H888N Features
• S mall Footprint (3.
3 x 3.
3 mm) for Compa ct Design
• Low RDS(on) to Minimize C onduction Losses
• Low Capacitance to Minimize Driver Losses
• These Devic es are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless ot herwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDS S 80 V Gate−to−Source Voltage V GS ±20 V Continuous Drain TC = 25 C ID Current RqJC (Notes 1, 2, 3, 4) Steady TC = 100°C Power Dissipation State TC = 25°C PD RqJC (Notes 1, 2, 3) TC = 100°C 12 A 8.
3 18 W .
Manufacture ON Semiconductor
Datasheet
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NTTFS6H888N

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NTTFS6H888N

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