N-Channel Power MOSFET
MOSFET - Power, Single N-Channel
80 V, 55 mW, 13 A
NTTFS6H888N
Features
• Small Footprint (3.3 x 3.3 mm) for Compact D...
Description
MOSFET - Power, Single N-Channel
80 V, 55 mW, 13 A
NTTFS6H888N
Features
Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
TC = 25°C
ID
Current RqJC (Notes 1, 2, 3, 4)
Steady TC = 100°C
Power Dissipation
State TC = 25°C
PD
RqJC (Notes 1, 2, 3)
TC = 100°C
12
A
8.3
18
W
9.2
Continuous Drain Current RqJA (Notes 1, 3, 4)
Power Dissipation RqJA (Notes 1, 3)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
4.7
A
3.3
2.9
W
1.5
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
47
A
Operating Junction and Storage Temperature Range
TJ, Tstg −55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 0.6 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
15
A
EAS
47
mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Note 3)
RqJC
8.2 °C/W
Junction−to−Ambient − Steady State (Note 3)
...
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