FDN5630

MOSFET – N-Channel, POWERTRENCH) 60 V FDN5630 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of dc−dc converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(on) in a small SOT23 footprint. onsemi’s POWERTRENCH technology provides faster switching than other MOSFETs with comparable RDS(on) specifications. The result is higher overall efficiency with less board space. Features  −1.7 A, 60 V  RDS(on) = 0.100 W @ VGS = 10 V  RDS(on) = 0.120 W @ VGS = 6 V  Optimized for Use in High Frequency DC−DC Converters  Low Gate Charge  Very Fast Switching  SUPERSOTt−3 Provides Low RDS(on) in SOT23 Footprint  This Device is Pb−Free and Halogen Free Applications  DC−DC Converters  Motor Drives DATA SHEET www.onsemi.com SOT−23−3 CASE 527AG D G S MARKING DIAGRAM &E&Y 5630&G &E &Y 5630 &G = Designates Space = Binary Calendar Year Coding Scheme = Specific Device Code = Date Code ORDERING INFORMATION Device FDN5630 Package SOT−23−3 (Pb−Free) Shipping† 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2000 1 December, 2022 − Rev. 5 Publication Order Number: FDN5630/D FDN5630 ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS ...