Document
MOSFET - Power, Single N-Channel
80 V, 20.7 mW, 32 A
NTMFS6H858N
Features
• Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
29
A
21
42
W
21
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1, 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
8.4
A
6.0
3.5
W
1.8
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
137
A
Operating Junction and Storage Temperature Range
TJ, Tstg − 55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 3.5 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
35
A
EAS
151 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
3.5 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
42.5
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS 80 V
RDS(ON) MAX 20.7 mW @ 10 V
ID MAX 32 A
D (5,6)
G (4)
S (1,2,3) N−CHANNEL MOSFET
1
DFN5 (SO−8FL) CASE 488AA STYLE 1
MARKING DIAGRAM
D
S
D
S 6H858N
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
June, 2020 − Rev. 2
Publication Order Number: NTMFS6H858N/D
NTMFS6H858N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
V(BR)DSS V(BR)DSS/
TJ
VGS = 0 V, ID = 250 mA
80 44
V mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4)
IDSS IGSS
VGS = 0 V, VDS = 80 V
TJ = 25 °C TJ = 125°C
VDS = 0 V, VGS = 20 V
10 mA
250
100
nA
Gate Threshold Voltage
VGS(TH)
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 30 mA
VGS = 10 V
ID = 5 A
VGS = 6 V
ID = 5 A
VDS =15 V, ID = 10 A
2.0
4.0
V
−7.5
mV/°C
16.9 20.7 mW
25.3 34.2
36
S
Input Capacitance
CISS
510
Output Capacitance
COSS
VGS = 0 V, f = 1 MHz, VDS = 40 V
80
pF
Reverse Transfer Capacitance
CRSS
4.7
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 40 V; ID = 10 A
8.9
Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge
QG(TH)
2.2
nC
QGS
2.8
QGD
VGS = 10 V, VDS = 40 V; ID = 10 A
1.7
Plateau Voltage
VGP
4.8
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 64 V, ID = 10 A, RG = 2.5 W
8.0
17 ns
19
13
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 5 A
TJ = 125°C
0.8
1.2
V 0.7
Reverse Recovery Time
tRR
29
Charge Time Discharge Time
ta
VGS = 0 V, dIS/dt = 100 A/ms,
tb
IS = 10 A
19
ns
9.0
Reverse Recovery Charge
QRR
23
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures.
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ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
NTMFS6H858N
TYPICAL CHARACTERISTICS
180 150 120
90 60 30
0 0
VGS = 10 V
6V
5V
4V
12
3
4
5
6
7
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics
ID, DRAIN CURRENT (A)
180
150 TJ = 25°C
120
90
60
30
0
TJ = 125°C
TJ = −55°C
0 1 2 3 4 5 6 7 8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics
RDS.