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NTMFS6H858N Dataheets PDF



Part Number NTMFS6H858N
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet NTMFS6H858N DatasheetNTMFS6H858N Datasheet (PDF)

MOSFET - Power, Single N-Channel 80 V, 20.7 mW, 32 A NTMFS6H858N Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1).

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MOSFET - Power, Single N-Channel 80 V, 20.7 mW, 32 A NTMFS6H858N Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 29 A 21 42 W 21 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 8.4 A 6.0 3.5 W 1.8 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 137 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 3.5 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 35 A EAS 151 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 3.5 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 42.5 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. www.onsemi.com V(BR)DSS 80 V RDS(ON) MAX 20.7 mW @ 10 V ID MAX 32 A D (5,6) G (4) S (1,2,3) N−CHANNEL MOSFET 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 MARKING DIAGRAM D S D S 6H858N S AYWZZ G D D A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2018 1 June, 2020 − Rev. 2 Publication Order Number: NTMFS6H858N/D NTMFS6H858N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS V(BR)DSS/ TJ VGS = 0 V, ID = 250 mA 80 44 V mV/°C Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) IDSS IGSS VGS = 0 V, VDS = 80 V TJ = 25 °C TJ = 125°C VDS = 0 V, VGS = 20 V 10 mA 250 100 nA Gate Threshold Voltage VGS(TH) Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) RDS(on) Forward Transconductance gFS CHARGES, CAPACITANCES & GATE RESISTANCE VGS = VDS, ID = 30 mA VGS = 10 V ID = 5 A VGS = 6 V ID = 5 A VDS =15 V, ID = 10 A 2.0 4.0 V −7.5 mV/°C 16.9 20.7 mW 25.3 34.2 36 S Input Capacitance CISS 510 Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 40 V 80 pF Reverse Transfer Capacitance CRSS 4.7 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 40 V; ID = 10 A 8.9 Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge QG(TH) 2.2 nC QGS 2.8 QGD VGS = 10 V, VDS = 40 V; ID = 10 A 1.7 Plateau Voltage VGP 4.8 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time td(ON) Rise Time tr Turn−Off Delay Time td(OFF) Fall Time tf DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 10 V, VDS = 64 V, ID = 10 A, RG = 2.5 W 8.0 17 ns 19 13 Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C IS = 5 A TJ = 125°C 0.8 1.2 V 0.7 Reverse Recovery Time tRR 29 Charge Time Discharge Time ta VGS = 0 V, dIS/dt = 100 A/ms, tb IS = 10 A 19 ns 9.0 Reverse Recovery Charge QRR 23 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) NTMFS6H858N TYPICAL CHARACTERISTICS 180 150 120 90 60 30 0 0 VGS = 10 V 6V 5V 4V 12 3 4 5 6 7 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics ID, DRAIN CURRENT (A) 180 150 TJ = 25°C 120 90 60 30 0 TJ = 125°C TJ = −55°C 0 1 2 3 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics RDS.


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