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NTMFS6H858N Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NTMFS6H858N |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 2 0. 7 mW, 32 A NTMFS6H858N Features • Small Footprint (5x6 mm) for Compact D esign • Low RDS(on) to Minimize Condu ction Losses • Low QG and Capacitance to Minimize Driver Losses • These De vices are Pb−Free and are RoHS Compli ant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Va lue Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Curren t RqJC (Notes 1, 3) Power Dissipation R qJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 1 00°C 29 A 21 42 W 21 Continuou . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NTMFS6H858N |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 2 0. 7 mW, 32 A NTMFS6H858N Features • Small Footprint (5x6 mm) for Compact D esign • Low RDS(on) to Minimize Condu ction Losses • Low QG and Capacitance to Minimize Driver Losses • These De vices are Pb−Free and are RoHS Compli ant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Va lue Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Curren t RqJC (Notes 1, 3) Power Dissipation R qJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 1 00°C 29 A 21 42 W 21 Continuou . |
| Manufacture | ON Semiconductor |
| Datasheet |
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