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NVTFS6H860N Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | NVTFS6H860N |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single, N-Channel
80 V, 21. 1 mW, 33 A NVTFS6H860N Features • Small Footprint (3. 3 x 3. 3 mm) for Com pact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H86 0NWF − Wettable Flanks Product • AE C−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are Ro HS Compliant MAXIMUM RATINGS (TJ = 25 °C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Sourc e Voltage VGS ±20 V Continuous Dra in Current RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissi . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVTFS6H860N |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single, N-Channel
80 V, 21. 1 mW, 33 A NVTFS6H860N Features • Small Footprint (3. 3 x 3. 3 mm) for Com pact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H86 0NWF − Wettable Flanks Product • AE C−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are Ro HS Compliant MAXIMUM RATINGS (TJ = 25 °C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Sourc e Voltage VGS ±20 V Continuous Dra in Current RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissi . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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