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NVTFS6H860N Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part NVTFS6H860N
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single, N-Channel 80 V, 21.
1 mW, 33 A NVTFS6H860N Features
• Small Footprint (3.
3 x 3.
3 mm) for Com pact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVTFS6H86 0NWF − Wettable Flanks Product
• AE C−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are Ro HS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Sourc e Voltage VGS ±20 V Continuous Dra in Current RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissi .
Manufacture ON Semiconductor
Datasheet
Download NVTFS6H860N Datasheet
Part NVTFS6H860N
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single, N-Channel 80 V, 21.
1 mW, 33 A NVTFS6H860N Features
• Small Footprint (3.
3 x 3.
3 mm) for Com pact Design
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVTFS6H86 0NWF − Wettable Flanks Product
• AE C−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are Ro HS Compliant MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Sourc e Voltage VGS ±20 V Continuous Dra in Current RqJC (Notes 1, 2, 3, 4) TC = 25°C ID Steady TC = 100°C Power Dissi .
Manufacture ON Semiconductor
Datasheet
Download NVTFS6H860N Datasheet

NVTFS6H860N

NVTFS6H860N
NVTFS6H860N

NVTFS6H860N

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