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FDS4435BZ-F085 Datasheet, Equivalent, Power MOSFET.

P-Channel Power MOSFET

P-Channel Power MOSFET

 

 

 

Part FDS4435BZ-F085
Description P-Channel Power MOSFET
Feature FDS4435BZ-F085 P-Channel PowerTrench® M OSFET FDS4435BZ-F085 P-Channel PowerTr ench® MOSFET -30V, -8.
8A, 20m: Feature s „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.
8A „ Max rDS(on) = 35m: at VGS = -4.
5V, ID = -6.
7A „ Extended VGSS r ange (-25V) for battery applications „ HBM ESD protection level of ±3.
8KV ty pical (note 3) „ High performance tren ch technology for extremely low rDS(on) „ High power and current handling cap ability „ Termination is Lead-free and RoHS compliant Qualified to AEC Q101 General Description This P-Channel MOSF ET is produced using ON Semiconductor s advanced PowerTrench® p .
Manufacture ON Semiconductor
Datasheet
Download FDS4435BZ-F085 Datasheet
Part FDS4435BZ-F085
Description P-Channel Power MOSFET
Feature FDS4435BZ-F085 P-Channel PowerTrench® M OSFET FDS4435BZ-F085 P-Channel PowerTr ench® MOSFET -30V, -8.
8A, 20m: Feature s „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.
8A „ Max rDS(on) = 35m: at VGS = -4.
5V, ID = -6.
7A „ Extended VGSS r ange (-25V) for battery applications „ HBM ESD protection level of ±3.
8KV ty pical (note 3) „ High performance tren ch technology for extremely low rDS(on) „ High power and current handling cap ability „ Termination is Lead-free and RoHS compliant Qualified to AEC Q101 General Description This P-Channel MOSF ET is produced using ON Semiconductor s advanced PowerTrench® p .
Manufacture ON Semiconductor
Datasheet
Download FDS4435BZ-F085 Datasheet

FDS4435BZ-F085

FDS4435BZ-F085
FDS4435BZ-F085

FDS4435BZ-F085

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