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FDS4435BZ-F085 Datasheet, Equivalent, Power MOSFET.P-Channel Power MOSFET P-Channel Power MOSFET |
　
　
　
| Part | FDS4435BZ-F085 |
|---|---|
| Description | P-Channel Power MOSFET |
| Feature | FDS4435BZ-F085 P-Channel PowerTrench® M OSFET
FDS4435BZ-F085
P-Channel PowerTr ench® MOSFET
-30V, -8. 8A, 20m: Feature s „ Max rDS(on) = 20m: at VGS = -10V, ID = -8. 8A „ Max rDS(on) = 35m: at VGS = -4. 5V, ID = -6. 7A „ Extended VGSS r ange (-25V) for battery applications „ HBM ESD protection level of ±3. 8KV ty pical (note 3) „ High performance tren ch technology for extremely low rDS(on) „ High power and current handling cap ability „ Termination is Lead-free and RoHS compliant Qualified to AEC Q101 General Description This P-Channel MOSF ET is produced using ON Semiconductor†™s advanced PowerTrench® p . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDS4435BZ-F085 |
|---|---|
| Description | P-Channel Power MOSFET |
| Feature | FDS4435BZ-F085 P-Channel PowerTrench® M OSFET
FDS4435BZ-F085
P-Channel PowerTr ench® MOSFET
-30V, -8. 8A, 20m: Feature s „ Max rDS(on) = 20m: at VGS = -10V, ID = -8. 8A „ Max rDS(on) = 35m: at VGS = -4. 5V, ID = -6. 7A „ Extended VGSS r ange (-25V) for battery applications „ HBM ESD protection level of ±3. 8KV ty pical (note 3) „ High performance tren ch technology for extremely low rDS(on) „ High power and current handling cap ability „ Termination is Lead-free and RoHS compliant Qualified to AEC Q101 General Description This P-Channel MOSF ET is produced using ON Semiconductor†™s advanced PowerTrench® p . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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