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NTMYS020N08LH Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | NTMYS020N08LH |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 1 9. 5 mW, 30 A NTMYS020N08LH Features â €¢ Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Con duction Losses • Low QG and Capacitan ce to Minimize Driver Losses • LFPAK4 Package, Industry Standard • These D evices are Pb−Free and are RoHS Compl iant MAXIMUM RATINGS (TJ = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltag e VGS ±20 V Continuous Drain Curre nt RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C 30 A 21 Po wer Dissipation RqJC (Note 1) TC = 25 . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NTMYS020N08LH |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 1 9. 5 mW, 30 A NTMYS020N08LH Features â €¢ Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Con duction Losses • Low QG and Capacitan ce to Minimize Driver Losses • LFPAK4 Package, Industry Standard • These D evices are Pb−Free and are RoHS Compl iant MAXIMUM RATINGS (TJ = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltag e VGS ±20 V Continuous Drain Curre nt RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C 30 A 21 Po wer Dissipation RqJC (Note 1) TC = 25 . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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