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NVMFS021N10MCL Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NVMFS021N10MCL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET – Power, Single N-Channel
100 V, 23 mW, 31 A
NVMFS021N10MCL
Feature s
• Small Footprint (5x6 mm) for Comp act Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capaci tance to Minimize Driver Losses • NVM FWS021N10MCL − Wettable Flank Option for Enhanced Optical Inspection • AEC −Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Fr ee/BFR Free and are RoHS Compliant MAX IMUM RATINGS (TJ = 25°C unless otherwi se noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 10 0 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Note . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVMFS021N10MCL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET – Power, Single N-Channel
100 V, 23 mW, 31 A
NVMFS021N10MCL
Feature s
• Small Footprint (5x6 mm) for Comp act Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capaci tance to Minimize Driver Losses • NVM FWS021N10MCL − Wettable Flank Option for Enhanced Optical Inspection • AEC −Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Fr ee/BFR Free and are RoHS Compliant MAX IMUM RATINGS (TJ = 25°C unless otherwi se noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 10 0 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Note . |
| Manufacture | ON Semiconductor |
| Datasheet |
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