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NVTYS003N04C Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | NVTYS003N04C |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET – Power, Single N-Channel
40 V, 3. 9 mW, 99 A NVTYS003N04C Features â €¢ Small Footprint (3. 3 x 3. 3 mm) for C ompact Design • Low RDS(on) to Minimi ze Conduction Losses • Low Capacitanc e to Minimize Driver Losses • AEC−Q 101 Qualified and PPAP Capable • Thes e Devices are Pb−Free and are RoHS Co mpliant MAXIMUM RATINGS (TJ = 25°C un less otherwise noted) Parameter Symbo l Value Unit Drain−to−Source Volta ge VDSS 40 V Gate−to−Source Vol tage VGS ±20 V Continuous Drain Cu rrent RqJC (Notes 1, 2, 3, 4) TC = 25 °C ID Steady TC = 100°C Power Dissi pation State TC = 25°C PD RqJC (Not es 1 . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVTYS003N04C |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET – Power, Single N-Channel
40 V, 3. 9 mW, 99 A NVTYS003N04C Features â €¢ Small Footprint (3. 3 x 3. 3 mm) for C ompact Design • Low RDS(on) to Minimi ze Conduction Losses • Low Capacitanc e to Minimize Driver Losses • AEC−Q 101 Qualified and PPAP Capable • Thes e Devices are Pb−Free and are RoHS Co mpliant MAXIMUM RATINGS (TJ = 25°C un less otherwise noted) Parameter Symbo l Value Unit Drain−to−Source Volta ge VDSS 40 V Gate−to−Source Vol tage VGS ±20 V Continuous Drain Cu rrent RqJC (Notes 1, 2, 3, 4) TC = 25 °C ID Steady TC = 100°C Power Dissi pation State TC = 25°C PD RqJC (Not es 1 . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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