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NVTYS003N04C Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part NVTYS003N04C
Description N-Channel Power MOSFET
Feature MOSFET – Power, Single N-Channel 40 V, 3.
9 mW, 99 A NVTYS003N04C Features Small Footprint (3.
3 x 3.
3 mm) for C ompact Design
• Low RDS(on) to Minimi ze Conduction Losses
• Low Capacitanc e to Minimize Driver Losses
• AEC−Q 101 Qualified and PPAP Capable
• Thes e Devices are Pb−Free and are RoHS Co mpliant MAXIMUM RATINGS (TJ = 25°C un less otherwise noted) Parameter Symbo l Value Unit Drain−to−Source Volta ge VDSS 40 V Gate−to−Source Vol tage VGS ±20 V Continuous Drain Cu rrent RqJC (Notes 1, 2, 3, 4) TC = 25 C ID Steady TC = 100°C Power Dissi pation State TC = 25°C PD RqJC (Not es 1 .
Manufacture ON Semiconductor
Datasheet
Download NVTYS003N04C Datasheet
Part NVTYS003N04C
Description N-Channel Power MOSFET
Feature MOSFET – Power, Single N-Channel 40 V, 3.
9 mW, 99 A NVTYS003N04C Features Small Footprint (3.
3 x 3.
3 mm) for C ompact Design
• Low RDS(on) to Minimi ze Conduction Losses
• Low Capacitanc e to Minimize Driver Losses
• AEC−Q 101 Qualified and PPAP Capable
• Thes e Devices are Pb−Free and are RoHS Co mpliant MAXIMUM RATINGS (TJ = 25°C un less otherwise noted) Parameter Symbo l Value Unit Drain−to−Source Volta ge VDSS 40 V Gate−to−Source Vol tage VGS ±20 V Continuous Drain Cu rrent RqJC (Notes 1, 2, 3, 4) TC = 25 C ID Steady TC = 100°C Power Dissi pation State TC = 25°C PD RqJC (Not es 1 .
Manufacture ON Semiconductor
Datasheet
Download NVTYS003N04C Datasheet

NVTYS003N04C

NVTYS003N04C
NVTYS003N04C

NVTYS003N04C

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