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NVH4L045N065SC1 Datasheet, Equivalent, SiC MOSFET.SiC MOSFET SiC MOSFET |
　
　
　
| Part | NVH4L045N065SC1 |
|---|---|
| Description | SiC MOSFET |
| Feature | DATA SHEET www. onsemi. com Silicon Carbi de (SiC) MOSFET – 33 mohm, 650 V,†‰M2, TO-247-4L NVH4L045N065SC1 Featur es • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 n C) • High Speed Switching with Low Ca pacitance (Coss = 162 pF) • 100% Aval anche Tested • AEC−Q101 Qualified a nd PPAP Capable • This Device is Hali de Free and RoHS Compliant with exempti on 7a, Pb−Free 2LI (on second level i nterconnection) Typical Applications †¢ Automotive On Board Charger • Autom otive DC−DC Converter for EV/HEV MAX IMUM RATINGS (TJ = 25°C unless otherwi se n . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVH4L045N065SC1 |
|---|---|
| Description | SiC MOSFET |
| Feature | DATA SHEET www. onsemi. com Silicon Carbi de (SiC) MOSFET – 33 mohm, 650 V,†‰M2, TO-247-4L NVH4L045N065SC1 Featur es • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 n C) • High Speed Switching with Low Ca pacitance (Coss = 162 pF) • 100% Aval anche Tested • AEC−Q101 Qualified a nd PPAP Capable • This Device is Hali de Free and RoHS Compliant with exempti on 7a, Pb−Free 2LI (on second level i nterconnection) Typical Applications †¢ Automotive On Board Charger • Autom otive DC−DC Converter for EV/HEV MAX IMUM RATINGS (TJ = 25°C unless otherwi se n . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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