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NVH4L045N065SC1 Datasheet, Equivalent, SiC MOSFET.

SiC MOSFET

SiC MOSFET

 

 

 

Part NVH4L045N065SC1
Description SiC MOSFET
Feature DATA SHEET www.
onsemi.
com Silicon Carbi de (SiC) MOSFET – 33 mohm, 650 V, M2, TO-247-4L NVH4L045N065SC1 Featur es
• Typ.
RDS(on) = 33 mW @ VGS = 18 V Typ.
RDS(on) = 45 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 105 n C)
• High Speed Switching with Low Ca pacitance (Coss = 162 pF)
• 100% Aval anche Tested
• AEC−Q101 Qualified a nd PPAP Capable
• This Device is Hali de Free and RoHS Compliant with exempti on 7a, Pb−Free 2LI (on second level i nterconnection) Typical Applications Automotive On Board Charger
• Autom otive DC−DC Converter for EV/HEV MAX IMUM RATINGS (TJ = 25°C unless otherwi se n .
Manufacture ON Semiconductor
Datasheet
Download NVH4L045N065SC1 Datasheet
Part NVH4L045N065SC1
Description SiC MOSFET
Feature DATA SHEET www.
onsemi.
com Silicon Carbi de (SiC) MOSFET – 33 mohm, 650 V, M2, TO-247-4L NVH4L045N065SC1 Featur es
• Typ.
RDS(on) = 33 mW @ VGS = 18 V Typ.
RDS(on) = 45 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(tot) = 105 n C)
• High Speed Switching with Low Ca pacitance (Coss = 162 pF)
• 100% Aval anche Tested
• AEC−Q101 Qualified a nd PPAP Capable
• This Device is Hali de Free and RoHS Compliant with exempti on 7a, Pb−Free 2LI (on second level i nterconnection) Typical Applications Automotive On Board Charger
• Autom otive DC−DC Converter for EV/HEV MAX IMUM RATINGS (TJ = 25°C unless otherwi se n .
Manufacture ON Semiconductor
Datasheet
Download NVH4L045N065SC1 Datasheet

NVH4L045N065SC1

NVH4L045N065SC1
NVH4L045N065SC1

NVH4L045N065SC1

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