NVH4L045N065SC1

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 33 mohm, 650 V, M2, TO-247-4L NVH4L045N065SC1 Features Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @ VGS = 15 V Ultra Low Gate Charge (QG(tot) = 105 nC) High Speed Switching with Low Capacitance (Coss = 162 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications Automotive On Board Charger Automotive DC−DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values TC < 175°C VGSop −5/+18 V of Gate−to−Source Voltage Continuous Drain Current (Note 2) Steady TC = 25°C ID State 55 A Power Dissipation (Note 2) PD 187 W Continuous Drain Steady TC = 100°C ID Current (Notes 1, 2) State 39 A Power Dissipation (Notes 1, 2) PD 94 W Pulsed Drain Current (Note 3) TC = 25°C IDM 197 A Single Pulse Surge TA = 25°C, tp = 10 ms, Drain Current Capability RG = 4.7 W IDSC 315 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 12 A, L = 1 mH) (Note 4) Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) IS 45 A EAS 72 mJ TL 300 °C Stresses exceeding those listed in the...