| DatasheetsPDF.com |
NVMFS027N10MCL Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | NVMFS027N10MCL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET – Power, Single N-Channel
100 V , 26 mW, 28 A
NVMFS027N10MCL
Features
• Small Footprint (5x6 mm) for Compac t Design • Low RDS(on) to Minimize Co nduction Losses • Low QG and Capacita nce to Minimize Driver Losses • AEC∠’Q101 Qualified and PPAP Capable • NV MFWS027N10MCL − Wettable Flank Produc ts • These Devices are Pb−Free, Hal ogen Free/BFR Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Curren t RqJC (Notes 1, 3) Power Dissipation R qJC ( . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVMFS027N10MCL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET – Power, Single N-Channel
100 V , 26 mW, 28 A
NVMFS027N10MCL
Features
• Small Footprint (5x6 mm) for Compac t Design • Low RDS(on) to Minimize Co nduction Losses • Low QG and Capacita nce to Minimize Driver Losses • AEC∠’Q101 Qualified and PPAP Capable • NV MFWS027N10MCL − Wettable Flank Produc ts • These Devices are Pb−Free, Hal ogen Free/BFR Free and are RoHS Complia nt MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Val ue Unit Drain−to−Source Voltage V DSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Curren t RqJC (Notes 1, 3) Power Dissipation R qJC ( . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |