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FDB86563-F085 Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part FDB86563-F085
Description N-Channel Power MOSFET
Feature FDB86563-F085 N-Channel PowerTrench® MO SFET FDB86563-F085 N-Channel PowerTren ch® MOSFET 60 V, 110 A, 1.
8 mΩ Featu res „ Typical RDS(on) = 1.
6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A „ UIS C apability „ RoHS Compliant „ Qualifie d to AEC Q101 Applications „ Automotiv e Engine Control „ PowerTrain Manageme nt „ Solenoid and Motor Drivers „ Int egrated Starter/Alternator „ Primary S witch for 12V Systems D D G GS TO- 263 S FDB SERIES MOSFET Maximum Rati ngs TJ = 25°C unless otherwise noted.
Symbol Parameter VDSS VGS ID Drain- to-Source Voltage Gate-to-Sou .
Manufacture ON Semiconductor
Datasheet
Download FDB86563-F085 Datasheet
Part FDB86563-F085
Description N-Channel Power MOSFET
Feature FDB86563-F085 N-Channel PowerTrench® MO SFET FDB86563-F085 N-Channel PowerTren ch® MOSFET 60 V, 110 A, 1.
8 mΩ Featu res „ Typical RDS(on) = 1.
6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A „ UIS C apability „ RoHS Compliant „ Qualifie d to AEC Q101 Applications „ Automotiv e Engine Control „ PowerTrain Manageme nt „ Solenoid and Motor Drivers „ Int egrated Starter/Alternator „ Primary S witch for 12V Systems D D G GS TO- 263 S FDB SERIES MOSFET Maximum Rati ngs TJ = 25°C unless otherwise noted.
Symbol Parameter VDSS VGS ID Drain- to-Source Voltage Gate-to-Sou .
Manufacture ON Semiconductor
Datasheet
Download FDB86563-F085 Datasheet

FDB86563-F085

FDB86563-F085
FDB86563-F085

FDB86563-F085

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