| DatasheetsPDF.com |
FDB86563-F085 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | FDB86563-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDB86563-F085 N-Channel PowerTrench® MO SFET
FDB86563-F085
N-Channel PowerTren ch® MOSFET
60 V, 110 A, 1. 8 mΩ Featu res Typical RDS(on) = 1. 6 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS C apability RoHS Compliant Qualifie d to AEC Q101 Applications Automotiv e Engine Control PowerTrain Manageme nt Solenoid and Motor Drivers Int egrated Starter/Alternator Primary S witch for 12V Systems D D G GS TO- 263 S FDB SERIES MOSFET Maximum Rati ngs TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain- to-Source Voltage Gate-to-Sou . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDB86563-F085 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | FDB86563-F085 N-Channel PowerTrench® MO SFET
FDB86563-F085
N-Channel PowerTren ch® MOSFET
60 V, 110 A, 1. 8 mΩ Featu res Typical RDS(on) = 1. 6 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A UIS C apability RoHS Compliant Qualifie d to AEC Q101 Applications Automotiv e Engine Control PowerTrain Manageme nt Solenoid and Motor Drivers Int egrated Starter/Alternator Primary S witch for 12V Systems D D G GS TO- 263 S FDB SERIES MOSFET Maximum Rati ngs TJ = 25°C unless otherwise noted. Symbol Parameter VDSS VGS ID Drain- to-Source Voltage Gate-to-Sou . |
| Manufacture | ON Semiconductor |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |