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FQA11N90C-F109 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | FQA11N90C-F109 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | FQA11N90C-F109 — N-Channel QFET® MOSF ET
FQA11N90C-F109
N-Channel QFET® MOS FET
900 V, 11. 0 A, 1. 1 Ω Features • 11 A, 900 V, RDS(on) = 1. 1 Ω (Max. ) @ VGS = 10 V, ID = 5. 5 A • Low Gate Cha rge (Typ. 60 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested • RoHS compliant Description This N-Channel e nhancement mode power MOSFET is produce d using ON Semiconductor’s proprietar y planar stripe and DMOS technology. Th is advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior swi tching performance and high avalanche e nergy strength. These devices ar . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FQA11N90C-F109 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | FQA11N90C-F109 — N-Channel QFET® MOSF ET
FQA11N90C-F109
N-Channel QFET® MOS FET
900 V, 11. 0 A, 1. 1 Ω Features • 11 A, 900 V, RDS(on) = 1. 1 Ω (Max. ) @ VGS = 10 V, ID = 5. 5 A • Low Gate Cha rge (Typ. 60 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested • RoHS compliant Description This N-Channel e nhancement mode power MOSFET is produce d using ON Semiconductor’s proprietar y planar stripe and DMOS technology. Th is advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior swi tching performance and high avalanche e nergy strength. These devices ar . |
| Manufacture | ON Semiconductor |
| Datasheet |
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