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NVH4L060N065SC1 Datasheet, Equivalent, SiC MOSFET.

SiC MOSFET

SiC MOSFET

 

 

 

Part NVH4L060N065SC1
Description SiC MOSFET
Feature MOSFET - SiC Power, Single N-Channel, TO 247-4L 650 V, 44 mW, 47 A NVH4L060N065 SC1 Features
• Typ.
RDS(on) = 44 mW @ VGS = 18 V Typ.
RDS(on) = 60 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(t ot) = 74 nC)
• Low Capacitance (Coss = 133 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free and is RoH S Compliant Typical Applications
• Au tomotive On Board Charger
• Automotiv e DC/DC Converter for EV/HEV MAXIMUM R ATINGS (TJ = 25°C unless otherwise not ed) Parameter Symbol Value Unit Drai n−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+2 2 V R .
Manufacture ON Semiconductor
Datasheet
Download NVH4L060N065SC1 Datasheet
Part NVH4L060N065SC1
Description SiC MOSFET
Feature MOSFET - SiC Power, Single N-Channel, TO 247-4L 650 V, 44 mW, 47 A NVH4L060N065 SC1 Features
• Typ.
RDS(on) = 44 mW @ VGS = 18 V Typ.
RDS(on) = 60 mW @ VGS = 15 V
• Ultra Low Gate Charge (QG(t ot) = 74 nC)
• Low Capacitance (Coss = 133 pF)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free and is RoH S Compliant Typical Applications
• Au tomotive On Board Charger
• Automotiv e DC/DC Converter for EV/HEV MAXIMUM R ATINGS (TJ = 25°C unless otherwise not ed) Parameter Symbol Value Unit Drai n−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+2 2 V R .
Manufacture ON Semiconductor
Datasheet
Download NVH4L060N065SC1 Datasheet

NVH4L060N065SC1

NVH4L060N065SC1
NVH4L060N065SC1

NVH4L060N065SC1

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