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NVH4L060N065SC1 Datasheet, Equivalent, SiC MOSFET.SiC MOSFET SiC MOSFET |
| Part | NVH4L060N065SC1 |
|---|---|
| Description | SiC MOSFET |
| Feature | MOSFET - SiC Power, Single N-Channel, TO 247-4L
650 V, 44 mW, 47 A
NVH4L060N065 SC1
Features
• Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(t ot) = 74 nC) • Low Capacitance (Coss = 133 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoH S Compliant Typical Applications • Au tomotive On Board Charger • Automotiv e DC/DC Converter for EV/HEV MAXIMUM R ATINGS (TJ = 25°C unless otherwise not ed) Parameter Symbol Value Unit Drai n−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+2 2 V R . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVH4L060N065SC1 |
|---|---|
| Description | SiC MOSFET |
| Feature | MOSFET - SiC Power, Single N-Channel, TO 247-4L
650 V, 44 mW, 47 A
NVH4L060N065 SC1
Features
• Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(t ot) = 74 nC) • Low Capacitance (Coss = 133 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free and is RoH S Compliant Typical Applications • Au tomotive On Board Charger • Automotiv e DC/DC Converter for EV/HEV MAXIMUM R ATINGS (TJ = 25°C unless otherwise not ed) Parameter Symbol Value Unit Drai n−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+2 2 V R . |
| Manufacture | ON Semiconductor |
| Datasheet |
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