NVH4L060N065SC1

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 44 mW, 47 A NVH4L060N065SC1 Features Typ. RDS(on) = 44 mW @ VGS = 18 V Typ. RDS(on) = 60 mW @ VGS = 15 V Ultra Low Gate Charge (QG(tot) = 74 nC) Low Capacitance (Coss = 133 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant Typical Applications Automotive On Board Charger Automotive DC/DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values TC < 175°C VGSop −5/+18 V of Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady TC = 25°C ID State 47 A Power Dissipation (Note 1) PD 176 W Continuous Drain Current (Note 1) Steady TC = 100°C ID State 33 A Power Dissipation (Note 1) PD 88 W Pulsed Drain Current (Note 2) TC = 25°C IDM 152 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 10.1 A, L = 1 mH) (Note 3) Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) IS 35 A EAS 51 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment imp...