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NVMFS6H858NL Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | NVMFS6H858NL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | DATA SHEET www. onsemi. com MOSFET - Powe r, Single N-Channel 80 V, 19. 5 mW, 30 A V(BR)DSS 80 V RDS(ON) MAX 19. 5 mW @ 10 V 25 mW @ 4. 5 V ID MAX 30 A NVMFS6 H858NL D (5,6) Features Small Footpr int (5x6 mm) for Compact Design Low RD S(on) to Minimize Conduction Losses Lo w QG and Capacitance to Minimize Driver Losses NVMFS6H858NLWF − Wettable Fl ank Option for Enhanced Optical Inspect ion AEC−Q101 Qualified and PPAP Capa ble These Devices are Pb−Free and ar e RoHS Compliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parame ter Symbol Value Unit Drain−to−So urce Voltage VDSS 80 V . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVMFS6H858NL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | DATA SHEET www. onsemi. com MOSFET - Powe r, Single N-Channel 80 V, 19. 5 mW, 30 A V(BR)DSS 80 V RDS(ON) MAX 19. 5 mW @ 10 V 25 mW @ 4. 5 V ID MAX 30 A NVMFS6 H858NL D (5,6) Features Small Footpr int (5x6 mm) for Compact Design Low RD S(on) to Minimize Conduction Losses Lo w QG and Capacitance to Minimize Driver Losses NVMFS6H858NLWF − Wettable Fl ank Option for Enhanced Optical Inspect ion AEC−Q101 Qualified and PPAP Capa ble These Devices are Pb−Free and ar e RoHS Compliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parame ter Symbol Value Unit Drain−to−So urce Voltage VDSS 80 V . |
| Manufacture | ON Semiconductor |
| Datasheet |
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