NTTFS6H860N

MOSFET - Power, Single N-Channel 80 V, 21.1 mW, 33 A NTTFS6H860N Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID Current RqJC (Notes 1, 2, 3, 4) Steady TC = 100°C Power Dissipation State TC = 25°C PD RqJC (Notes 1, 2, 3) TC = 100°C 30 A 21 46 W 23 Continuous Drain Current RqJA (Notes 1, 3, 4) Power Dissipation RqJA (Notes 1, 3) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 8.0 A 5.5 3.1 W 1.6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 119 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 1.5 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 38 A EAS 138 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 3) RqJC 3.3 °C/W Junction−to−Ambient − Steady State (Note 3)...