N-Channel Power MOSFET
MOSFET - N-Channel Shielded Gate PowerTrench[
150 V, 31 mW, 31 A
NTMFS034N15MC
Features
• Small Footprint (5 x 6 mm) f...
Description
MOSFET - N-Channel Shielded Gate PowerTrench[
150 V, 31 mW, 31 A
NTMFS034N15MC
Features
Small Footprint (5 x 6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses 100% UIL Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Synchronous Rectification AC−DC and DC−DC Power Supplies AC−DC Adapters (USB PD) SR Load Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
150
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
ID
Current RqJC (Note 2) Steady
Power Dissipation
State
TC = 25°C
PD
RqJC (Note 2)
31
A
62.5 W
Continuous Drain Current RqJA (Notes 1, 2)
Power Dissipation RqJA (Notes 1, 2)
ID
Steady State
TA = 25°C
PD
6.1
A
2.5
W
Pulsed Drain Current TC = 25°C, tp = 100 ms IDM
131
A
Operating Junction and Storage Temperature Range
TJ, Tstg − 55 to °C +150
Single Pulse Drain−to−Source Avalanche Energy (IL = 6 Apk, L = 3 mH)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
EAS
54
mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance ...
Similar Datasheet