FDBL0260N100

FDBL0260N100 N-Channel PowerTrench® MOSFET www.onsemi.com FDBL0260N100 N-Channel PowerTrench® MOSFET 100 V, 200 A, 2.6 mΩ „ Max RDS(on) = 2.6 mΩ at VGS = 10 V, ID = 80 A Applications „ Max Qg(tot) = 116 nC at VGS = 10 V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Industrial Motor Drive „ Industrial Power Supply „ Industrial Automation „ Battery Operated tools „ Battery Protection „ Solar Inverters „ UPS and Energy Inverters „ Energy Storage „ Load Switch D D TOP S SSS S SS G BOTTOM G S MO-299A MOSFET Maximum Ratings TC = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25°C TC = 100°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 5) (Note 5) (Note 4) (Note 3) (Note 1a) Ratings 100 ±20 200 140 1000 866 250 3.5 -55 to +175 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 0.6 (Note 1a) 43 °C/W Device Marking FDBL0260N100 Device FDBL0260N100 Package MO-299A Reel Size - Tape Width - Quantity - Semiconductor Components Industries, LLC, 2016 December, 2016, Rev. 1.1 1 Publication Order Number: FDBL0260N100/D FDBL0260N100 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25...