N-Channel MOSFET
NDS351AN
NDS351AN
N-Channel, Logic Level, PowerTrench® MOSFET
General Description
Features
These N-Channel Logic Le...
Description
NDS351AN
NDS351AN
N-Channel, Logic Level, PowerTrench® MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using
ON
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
1.4 A, 30 V.
RDS(ON) = 160 mΩ @ VGS = 10 V RDS(ON) = 250 mΩ @ VGS = 4.5 V
Ultra-Low gate charge
Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities
High performance trench technology for extremely low RDS(ON)
D
D
S
SuperSOT TM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
351A
NDS351AN
7’’
© 2003 Semiconductor Components Ind...
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