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FDBL9403-F085T6 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
| Part | FDBL9403-F085T6 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel, TOLL
4 0 V, 0. 95 mW, 300 A FDBL9403-F085T6 F eatures • Low RDS(on) to Minimize Con duction Losses • Low QG and Capacitan ce to Minimize Driver Losses • AEC− Q101 Qualified and PPAP Capable • Sma ll Footprint (TOLL) for Compact Design • These Devices are Pb−Free, Haloge n Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless oth erwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VG S +20/−16 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation Rq JC (Note 1) TC = 25°C ID Steady TC = . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDBL9403-F085T6 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel, TOLL
4 0 V, 0. 95 mW, 300 A FDBL9403-F085T6 F eatures • Low RDS(on) to Minimize Con duction Losses • Low QG and Capacitan ce to Minimize Driver Losses • AEC− Q101 Qualified and PPAP Capable • Sma ll Footprint (TOLL) for Compact Design • These Devices are Pb−Free, Haloge n Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless oth erwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VG S +20/−16 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation Rq JC (Note 1) TC = 25°C ID Steady TC = . |
| Manufacture | ON Semiconductor |
| Datasheet |
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