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FDBL9403-F085T6 Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part FDBL9403-F085T6
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel, TOLL 4 0 V, 0.
95 mW, 300 A FDBL9403-F085T6 F eatures
• Low RDS(on) to Minimize Con duction Losses
• Low QG and Capacitan ce to Minimize Driver Losses
• AEC− Q101 Qualified and PPAP Capable
• Sma ll Footprint (TOLL) for Compact Design
• These Devices are Pb−Free, Haloge n Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless oth erwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VG S +20/−16 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation Rq JC (Note 1) TC = 25°C ID Steady TC = .
Manufacture ON Semiconductor
Datasheet
Download FDBL9403-F085T6 Datasheet
Part FDBL9403-F085T6
Description N-Channel Power MOSFET
Feature MOSFET - Power, Single N-Channel, TOLL 4 0 V, 0.
95 mW, 300 A FDBL9403-F085T6 F eatures
• Low RDS(on) to Minimize Con duction Losses
• Low QG and Capacitan ce to Minimize Driver Losses
• AEC− Q101 Qualified and PPAP Capable
• Sma ll Footprint (TOLL) for Compact Design
• These Devices are Pb−Free, Haloge n Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless oth erwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VG S +20/−16 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation Rq JC (Note 1) TC = 25°C ID Steady TC = .
Manufacture ON Semiconductor
Datasheet
Download FDBL9403-F085T6 Datasheet

FDBL9403-F085T6

FDBL9403-F085T6
FDBL9403-F085T6

FDBL9403-F085T6

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