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NDS9948 Datasheet, Equivalent, P-Channel MOSFET.60V Dual P-Channel MOSFET 60V Dual P-Channel MOSFET |
　
　
　
| Part | NDS9948 |
|---|---|
| Description | 60V Dual P-Channel MOSFET |
| Feature | NDS9948
NDS9948
Dual 60V P-Channel Powe rTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advance d PowerTrench process. It has been opti mized for power management applications requiring a wide range of gate drive v oltage ratings (4. 5V – 20V). Applicat ions • Power management • Load swit ch • Battery protection Features †¢ –2. 3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V RDS(ON) = 500 mΩ @ V GS = –4. 5 V • Low gate charge (9nC typical) • Fast switching speed †¢ High performance trench technology fo r extremely low RDS(ON) • High power and curre . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NDS9948 |
|---|---|
| Description | 60V Dual P-Channel MOSFET |
| Feature | NDS9948
NDS9948
Dual 60V P-Channel Powe rTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advance d PowerTrench process. It has been opti mized for power management applications requiring a wide range of gate drive v oltage ratings (4. 5V – 20V). Applicat ions • Power management • Load swit ch • Battery protection Features †¢ –2. 3 A, –60 V RDS(ON) = 250 mΩ @ VGS = –10 V RDS(ON) = 500 mΩ @ V GS = –4. 5 V • Low gate charge (9nC typical) • Fast switching speed †¢ High performance trench technology fo r extremely low RDS(ON) • High power and curre . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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