60V Dual P-Channel MOSFET
NDS9948
NDS9948
Dual 60V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate vers...
Description
NDS9948
NDS9948
Dual 60V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
Applications
Power management Load switch Battery protection
Features
–2.3 A, –60 V
RDS(ON) = 250 mΩ @ VGS = –10 V RDS(ON) = 500 mΩ @ VGS = –4.5 V
Low gate charge (9nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
High power and current handling capability
DD1 DD1 DD2 DD2
SO-8
Pin 1 SO-8
SS2GS2SS1GG1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a)
(Note 1a) (Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
NDS9948
NDS9948
13’’
©2010 Semiconductor Components Industries, LLC. September-2017, Rev. 2
5
4
6
Q1
3
7
2
Q2
8
1
Ratings
–60 ±20 –2.3 –10
2 1.6 1.0 0.9 –55 to +175
Units
V V A W
°C
78
°C/W
135
°C/W
40
°C/W
Tape width 12mm
Quantity 250...
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