FDS6681Z

MOSFET – P-Channel, POWERTRENCH) 30 V FDS6681Z General Description This P−Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features –20 A, –30 V ♦ RDS(ON) = 4.6 mΩ @ VGS = –10 V ♦ RDS(ON) = 6.5 mΩ @ VGS = –4.5 V Extended VGSS Range (–25 V) for Battery Applications HBM ESD Protection Level of 8 kV Typical (Note 3) High Performance Trench Technology for Extremely Low RDS(ON) High Power and Current Handling Capability Termination is Lead−free and RoHS Compliant This is a Pb−Free and Halide Free Device ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain−Source Voltage −30 V VGSS Gate−Source Voltage ±25 V ID Drain Current Continuous (Note 1a) −20 A Pulsed −105 PD Power Dissipation for Single Operation (Note 1a) (Note 1b) 2.5 W 1.2 (Note 1c) 1.0 TJ, Operating and Storage Junction TSTG Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter RqJA Thermal Resistance, Junction−to−Ambient RqJC Thermal Resistance, Junction−to−Case (No...