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FDS6681Z Datasheet, Equivalent, P-Channel MOSFET.30V P-Channel MOSFET 30V P-Channel MOSFET |
　
　
　
| Part | FDS6681Z |
|---|---|
| Description | 30V P-Channel MOSFET |
| Feature | MOSFET – P-Channel, POWERTRENCH)
30 V
FDS6681Z
General Description This P∠’Channel MOSFET is produced using onsem i’s advanced
PowerTrench process that has been especially tailored to minimi ze the on−state resistance. This devi ce is well suited for Power Management and load switching applications common in Notebook Computers and Portable Batt ery Packs. Features • –20 A, –30 V ♦ RDS(ON) = 4. 6 mΩ @ VGS = –10 V ♦ RDS(ON) = 6. 5 mΩ @ VGS = –4. 5 V • Extended VGSS Range (–25 V) for Battery Applications • HBM ESD Prote ction Level of 8 kV Typical (Note 3) †¢ High Performance Trench Technology fo r Extre . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDS6681Z |
|---|---|
| Description | 30V P-Channel MOSFET |
| Feature | MOSFET – P-Channel, POWERTRENCH)
30 V
FDS6681Z
General Description This P∠’Channel MOSFET is produced using onsem i’s advanced
PowerTrench process that has been especially tailored to minimi ze the on−state resistance. This devi ce is well suited for Power Management and load switching applications common in Notebook Computers and Portable Batt ery Packs. Features • –20 A, –30 V ♦ RDS(ON) = 4. 6 mΩ @ VGS = –10 V ♦ RDS(ON) = 6. 5 mΩ @ VGS = –4. 5 V • Extended VGSS Range (–25 V) for Battery Applications • HBM ESD Prote ction Level of 8 kV Typical (Note 3) †¢ High Performance Trench Technology fo r Extre . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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