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NTMFS6H852NL Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | NTMFS6H852NL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 1 3. 1 mW, 42 A NTMFS6H852NL Features †¢ Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Cond uction Losses • Low QG and Capacitanc e to Minimize Driver Losses • These D evices are Pb−Free and are RoHS Compl iant MAXIMUM RATINGS (TJ = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltag e VGS ±20 V Continuous Drain Curre nt RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady T C = 100°C State TC = 25°C PD TC = 100°C 42 A 29 54 W 27 Continuo . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NTMFS6H852NL |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel
80 V, 1 3. 1 mW, 42 A NTMFS6H852NL Features †¢ Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Cond uction Losses • Low QG and Capacitanc e to Minimize Driver Losses • These D evices are Pb−Free and are RoHS Compl iant MAXIMUM RATINGS (TJ = 25°C unles s otherwise noted) Parameter Symbol V alue Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltag e VGS ±20 V Continuous Drain Curre nt RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady T C = 100°C State TC = 25°C PD TC = 100°C 42 A 29 54 W 27 Continuo . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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