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FDBL9406-F085T6 Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | FDBL9406-F085T6 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel, TOLL
4 0 V, 1. 21 mW, 240 A FDBL9406-F085T6 F eatures • Low RDS(on) to Minimize Con duction Losses • Low QG and Capacitan ce to Minimize Driver Losses • Lowers Switching Noise/EMI • AEC−Q101 Qua lified and PPAP Capable • These Devic es are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATING S (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−t o−Source Voltage VDSS 40 V Gate∠’to−Source Voltage VGS +20/−16 V Continuous Drain TC = 25°C ID Curre nt RqJC (Note 2) Steady TC = 100°C Po wer Dissipation RqJC (Note 2) State TC = . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDBL9406-F085T6 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel, TOLL
4 0 V, 1. 21 mW, 240 A FDBL9406-F085T6 F eatures • Low RDS(on) to Minimize Con duction Losses • Low QG and Capacitan ce to Minimize Driver Losses • Lowers Switching Noise/EMI • AEC−Q101 Qua lified and PPAP Capable • These Devic es are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATING S (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−t o−Source Voltage VDSS 40 V Gate∠’to−Source Voltage VGS +20/−16 V Continuous Drain TC = 25°C ID Curre nt RqJC (Note 2) Steady TC = 100°C Po wer Dissipation RqJC (Note 2) State TC = . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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