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FDC608PZ-F171 Datasheet, Equivalent, P-Channel MOSFET.P-Channel MOSFET P-Channel MOSFET |
　
　
　
| Part | FDC608PZ-F171 |
|---|---|
| Description | P-Channel MOSFET |
| Feature | DATA SHEET www. onsemi. com MOSFET – P- Channel, POWERTRENCH) 2. 5 V Specified F DC608PZ, FDC608PZ-F171 D DS DG D TSOTâ ˆ’23−6 CASE 419BL Description This P −Channel 2. 5 V specified MOSFET is pr oduced using onsemi’s advanced POWERT RENCH process that has been especially tailored to minimize the on−state res istance and yet maintain low gate charg e for superior switching performance. T hese devices are well suited for batter y power applications: load switching an d power management, battery power circu its, and dc−dc conversions. Features • –5. 8 A, –20 V. RDS(ON) = 30 mW @ VGS = –4. 5 V RDS(ON) = 43 mW @ V . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | FDC608PZ-F171 |
|---|---|
| Description | P-Channel MOSFET |
| Feature | DATA SHEET www. onsemi. com MOSFET – P- Channel, POWERTRENCH) 2. 5 V Specified F DC608PZ, FDC608PZ-F171 D DS DG D TSOTâ ˆ’23−6 CASE 419BL Description This P −Channel 2. 5 V specified MOSFET is pr oduced using onsemi’s advanced POWERT RENCH process that has been especially tailored to minimize the on−state res istance and yet maintain low gate charg e for superior switching performance. T hese devices are well suited for batter y power applications: load switching an d power management, battery power circu its, and dc−dc conversions. Features • –5. 8 A, –20 V. RDS(ON) = 30 mW @ VGS = –4. 5 V RDS(ON) = 43 mW @ V . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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