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NVC040N120SC1 Datasheet, Equivalent, SiC MOSFET.

SiC MOSFET

SiC MOSFET

 

 

 

Part NVC040N120SC1
Description SiC MOSFET
Feature Silicon Carbide (SiC) MOSFET – 40 mohm , 1200 V, M1, Bare Die NVC040N120SC1 Description Silicon Carbide (SiC) MOSFE T uses a completely new technology that provide superior switching performance and higher reliability compared to Sil icon.
In addition, the low ON resistanc e and compact chip size ensure low capa citance and gate charge.
Consequently, system benefits include highest efficie ncy, faster operation frequency, increa sed power density, reduced EMI, and red uced system size.
Features
• 1200 V @ TJ = 175°C
• Typ RDS(on) = 40 mW at VGS = 20 V, ID = 40 A
• High Speed S witching with Low Capacit .
Manufacture ON Semiconductor
Datasheet
Download NVC040N120SC1 Datasheet
Part NVC040N120SC1
Description SiC MOSFET
Feature Silicon Carbide (SiC) MOSFET – 40 mohm , 1200 V, M1, Bare Die NVC040N120SC1 Description Silicon Carbide (SiC) MOSFE T uses a completely new technology that provide superior switching performance and higher reliability compared to Sil icon.
In addition, the low ON resistanc e and compact chip size ensure low capa citance and gate charge.
Consequently, system benefits include highest efficie ncy, faster operation frequency, increa sed power density, reduced EMI, and red uced system size.
Features
• 1200 V @ TJ = 175°C
• Typ RDS(on) = 40 mW at VGS = 20 V, ID = 40 A
• High Speed S witching with Low Capacit .
Manufacture ON Semiconductor
Datasheet
Download NVC040N120SC1 Datasheet

NVC040N120SC1

NVC040N120SC1
NVC040N120SC1

NVC040N120SC1

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