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NVC040N120SC1 Datasheet, Equivalent, SiC MOSFET.SiC MOSFET SiC MOSFET |
| Part | NVC040N120SC1 |
|---|---|
| Description | SiC MOSFET |
| Feature | Silicon Carbide (SiC) MOSFET – 40 mohm , 1200 V, M1, Bare Die
NVC040N120SC1
Description Silicon Carbide (SiC) MOSFE T uses a completely new technology
that provide superior switching performance and higher reliability compared to Sil icon. In addition, the low ON resistanc e and compact chip size ensure low capa citance and gate charge. Consequently, system benefits include highest efficie ncy, faster operation frequency, increa sed power density, reduced EMI, and red uced system size. Features • 1200 V @ TJ = 175°C • Typ RDS(on) = 40 mW at VGS = 20 V, ID = 40 A • High Speed S witching with Low Capacit . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NVC040N120SC1 |
|---|---|
| Description | SiC MOSFET |
| Feature | Silicon Carbide (SiC) MOSFET – 40 mohm , 1200 V, M1, Bare Die
NVC040N120SC1
Description Silicon Carbide (SiC) MOSFE T uses a completely new technology
that provide superior switching performance and higher reliability compared to Sil icon. In addition, the low ON resistanc e and compact chip size ensure low capa citance and gate charge. Consequently, system benefits include highest efficie ncy, faster operation frequency, increa sed power density, reduced EMI, and red uced system size. Features • 1200 V @ TJ = 175°C • Typ RDS(on) = 40 mW at VGS = 20 V, ID = 40 A • High Speed S witching with Low Capacit . |
| Manufacture | ON Semiconductor |
| Datasheet |
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