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NTLJS3D0N02P8Z Datasheet, Equivalent, Power MOSFET.N-Channel Power MOSFET N-Channel Power MOSFET |
　
　
　
| Part | NTLJS3D0N02P8Z |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel, WDFN6
20 V
NTLJS3D0N02P8Z
Features
• Smal l Footprint (4 mm2) for Compact Design • Ultra−Low RDS(on) to Minimize Con duction Losses • These Devices are Pb −Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications • Wir eless Charging • Power Load Switch †¢ Power Management and Protection • B attery Management • DC−DC Converter s MAXIMUM RATINGS (TJ = 25°C unless o therwise noted) Parameter Symbol Valu e Unit Drain−to−Source Voltage VD SS 20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Cur- Ste ady TA = 25°C ID 20. 2 A rent RqJA ( Notes 1, 3) . |
| Manufacture | ON Semiconductor |
| Datasheet |
| Part | NTLJS3D0N02P8Z |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | MOSFET - Power, Single N-Channel, WDFN6
20 V
NTLJS3D0N02P8Z
Features
• Smal l Footprint (4 mm2) for Compact Design • Ultra−Low RDS(on) to Minimize Con duction Losses • These Devices are Pb −Free, Halogen−Free/BFR−Free and are RoHS Compliant Applications • Wir eless Charging • Power Load Switch †¢ Power Management and Protection • B attery Management • DC−DC Converter s MAXIMUM RATINGS (TJ = 25°C unless o therwise noted) Parameter Symbol Valu e Unit Drain−to−Source Voltage VD SS 20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Cur- Ste ady TA = 25°C ID 20. 2 A rent RqJA ( Notes 1, 3) . |
| Manufacture | ON Semiconductor |
| Datasheet |
　
　
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