NTTFS080N10G

MOSFET - Power, Single N-Channel, m8FL 100 V, 72 mW, 16 A NTTFS080N10G Features Wide SOA for Linear Mode Operation Low RDS(on) to Minimize Conduction Losses High Peak UIS Current Capability for Ruggedness Small Footprint (3.3 x 3.3 mm) for Compact Design These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications 48 V Hot Swap System, Load Switch, Soft−Start, E−Fuse MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 100 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Note 2) Steady TC = 25°C ID State TC = 100°C 16 A 11 Power Dissipation RqJC (Note 2) Steady TC = 25°C PD State TC = 100°C 39 W 19 Continuous Drain Current RqJA (Notes 1, 2) Steady TA = 25°C ID State TA = 100°C 4.1 A 2.8 Power Dissipation RqJA (Notes 1, 2) Steady TA = 25°C PD State TA = 100°C 2.5 W 1.2 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 125 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5.2 A, L = 3 mH) Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) IS 32 A EAS 40 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affe...