NTMTSC1D5N08MC

MOSFET - Power, Single N-Channel, DFNW8, DUAL COOL) 80 V, 1.56 mW, 287 A NTMTSC1D5N08MC Features Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling BMS/Storage, Home Automation MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID Current RqJC (Note 2) Steady Power Dissipation State PD RqJC (Note 2) 287 A 250 W Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady State PD 33 A 3.3 W Pulsed Drain Current TC = 25°C, tp = 10 ms IDM 3500 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +150 Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 31 A, L = 3 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) EAS 1441 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 2) Junction−to−Top Source − Steady S...