FDY1002PZ

MOSFET – Dual, P-Channel (-1.5 V), Specified, POWERTRENCH) –20 V, –0.83 A, 0.5 W FDY1002PZ General Description These P−Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. This Dual P−Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the rDS(on) @ VGS = –1.5 V. Features Max rDS(on) = 0.5 W at VGS = –4.5 V, ID = –0.83 A Max rDS(on) = 0.7 W at VGS = –2.5 V, ID = –0.70 A Max rDS(on) = 1.2 W at VGS = –1.8 V, ID = –0.43 A Max rDS(on) = 1.8 W at VGS = –1.5 V, ID = –0.36 A HBM ESD Protection Level = 1400 V (Note 1) This Device is Pb−Free and is RoHS Compliant Application Li−Ion Battery Pack NOTE: 1. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. DATA SHEET www.onsemi.com VDS −20 V rDS(on) MAX 0.5 W @ −4.5 V 0.7 W @ −2.5 V 1.2 W @ −1.8 V 1.8 W @ −1.5 V ID MAX −0.83 A 6 5 4 1 23 SOT−563 CASE 419BH MARKING DIAGRAM G&2 G = Device Code &2 = 2−Digit Date Code PIN ASSIGNMENT S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components I...