FDMC8010

DATA SHEET www.onsemi.com MOSFET – N-Channel, POWERTRENCH) 30 V, 75 A, 1.3 mW FDMC8010 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for applications where ultra low RDS(on) is required in small spaces such as High performance VRM, POL and Oring functions. Features Max RDS(on) = 1.3 mW at VGS = 10 V, ID = 30 A Max RDS(on) = 1.8 mW at VGS = 4.5 V, ID = 25 A High Performance Technology for Extremely Low RDS(on) These Devices are Pb−Free and are RoHS Compliant Applications DC−DC Buck Converters Point of Load High Efficiency Load Switch and Low Side Switching Oring FET MOSFET MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Volage (Note 4) ±20 V ID Drain Current −Continuous (Package limited) TC = 25°C −Continuous (Silicon limited) TC = 25°C −Continuous TA = 25°C (Note 1a) −Pulsed A 75 166 30 120 EAS Single Pulse Avalance Energy (Note 3) 153 mJ PD Power Dissipation TC = 25°C 54 W Power Dissipation TA = 25°C (Note 1a) 2.4 TJ, TSTG Operating and Storage Junction Temperature −55 to °C Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected...