FDMC8321LDC

MOSFET – N-Channel, DUAL COOL) 33, POWERTRENCH) 40 V, 108 A, 2.5 mW FDMC8321LDC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features DUAL COOL Top Side Cooling PQFN Package Max RDS(on) = 2.5 mW at VGS = 10 V, ID = 27 A Max RDS(on) = 4.1 mW at VGS = 4.5 V, ID = 21 A High Performance Technology for Extremely Low RDS(on) This Device is Pb−Free, Halide Free and RoHS Compliant Applications Primary DC−DC Switch Motor Bridge Switch Synchronous Rectifier MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current Continuous TC = 25°C 108 A Continuous TA = 25°C 27 (Note 1a) Pulsed (Note 4) 320 EAS Single Pulse Avalanche Energy (Note 3) 181 mJ PD Power Dissipation TC = 25°C 56 W Power Dissipation (Note 1a) TA = 25°C 2.9 TJ, TSTG Operating and Storage Junction Temperature Range −55 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET www.onsemi.com VDS 40 V RDS(on) MAX 2.5 mW @...