NTH4L027N65S3F

MOSFET – Power, N-Channel, SUPERFET) III, FRFET) 650 V, 75 A, 27.4 mW NTH4L027N65S3F Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features 700 V @ TJ = 150°C Typ. RDS(on) = 23 mW Ultra Low Gate Charge (Typ. Qg = 259 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar www.onsemi.com VDSS 650 V RDS(ON) MAX 27.4 mW @ 10 V ID MAX 75 A D G S1 S1: Driver Source S2: Power Source S2 POWER MOSFET D S2S1G TO−247−4LD CASE 340CJ MARKING DIAGRAM $Y&Z&3&K NTH4L027 N65S3F © Semiconductor Components Industries, LLC, 2017 November, 2019 − Rev. 2 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NTH4L027N65S3F = Specific Device Code ORDERING INFORMATION See detail...