FCH041N65EFLN4

MOSFET – Power, N-Channel, SUPERFET) II, FRFET) 650 V, 76 A, 41 mW FCH041N65EFLN4 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET II MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET II FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features 700 V @ TJ = 150°C Typ. RDS(on) = 36 mW Ultra Low Gate Charge (Typ. Qg = 229 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications Telecom / Server Power Supplies Industrial Power Supplies EV Charger UPS / Solar www.onsemi.com VDSS 650 V RDS(ON) MAX 41 mW @ 10 V ID MAX 76 A D G S1: Driver Source S1 S2 S2: Power Source POWER MOSFET D S2 S1G TO−247−4LD CASE 340CW MARKING DIAGRAM $Y&Z&3&K FCH041 N65EFLN4 © Semiconductor Components Industries, LLC, 2018 November, 2019 − Rev. 1 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCH041N65EFLN4 = Specific Device Code ORDERING INFORMATION See detailed or...