Document
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive
650 V, 30 A, 99 mW
FCB099N65S3
Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features
• 700 V @ TJ = 150°C • Typ. RDS(on) = 79 mW • Ultra Low Gate Charge (Typ. Qg = 61 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar
www.onsemi.com
VDSS 650 V
RDS(ON) MAX 99 mW @ 10 V
ID MAX 30 A
D
G
S POWER MOSFET
D
G S D2−PAK
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K FCB 099N65S3
$Y &Z &3 &K FCB099N65S3
= ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code
ORDERING INFORMATION
See detailed ordering, marking and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
February, 2020 − Rev. 0
Publication Order Number: FCB099N65S3/D
FCB099N65S3
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain to Source Voltage Gate to Source Voltage
− DC − AC (f > 1 Hz)
650
V
±30
V
±30
ID
Drain Current
− Continuous (TC = 25°C)
30
− Continuous (TC = 100°C)
19
IDM
Drain Current
− Pulsed (Note 1)
75
EAS
Single Pulsed Avalanche Energy (Note 2)
145
IAS
Avalanche Current (Note 2)
4.4
EAR
Repetitive Avalanche Energy (Note 1)
2.27
dv/dt
MOSFET dv/dt
100
A
A mJ A mJ V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C) − Derate Above 25°C
227
W
1.82
W/°C
TJ, TSTG Operating and Storage Temperature Range
−55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 4.4 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC RqJA
Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
Value 0.55 40
Unit _C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Reel Size
Tape Width
Shipping†
FCB099N65S3
FCB099N65S3
D2−PAK
330 mm
24 mm
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
www.onsemi.com 2
FCB099N65S3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS / DTJ Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = 1 mA, TJ = 25_C VGS = 0 V, ID = 1 mA, TJ = 150_C ID = 1 mA, Referenced to 25_C
650 700
0.68
V V V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V
1
mA
1.4
±100
nA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 0.74 mA VGS = 10 V, ID = 15 A VDS = 20 V, ID = 15 A
2.5
4.5
V
79
99
mW
19
S
Ciss
Input Capacitance
VDS = 400 V, VGS = 0 V, f = 1 MHz
2480
pF
Coss
Output Capacitance
55
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
544
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
78
pF
Qg(tot)
Total Gate Charge at 10 V
VDS = 400 V, ID = 15 A, VGS = 10 V
61
nC
(Note 4)
Qgs
Gate to Source Gate Charge
15
nC
Qgd
Gate to Drain “Miller” Charge
25
nC
ESR
Equivalent Series Resistance
f = 1 MHz
0.4
W
SWITCHING CHARACTERISTICS
td(on) tr
Turn-On Delay Time Turn-On Rise Time
VDD = 400 V, ID = 15 A, VGS = 10 V,
23
ns
Rg = 4.7 W (Note 4)
24
ns
td(off)
Turn-Off Delay Time
60
ns
tf
Turn-Off Fall Time
5
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Maximum Continuous Source to Drain Diode Forward Current
30
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
75
A
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 15 A
1.2
V
trr
Reverse Recovery Time
Qrr
.