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FCB099N65S3 Dataheets PDF



Part Number FCB099N65S3
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet FCB099N65S3 DatasheetFCB099N65S3 Datasheet (PDF)

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW FCB099N65S3 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series .

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MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW FCB099N65S3 Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 79 mW • Ultra Low Gate Charge (Typ. Qg = 61 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Server Power Supplies • Industrial Power Supplies • UPS / Solar www.onsemi.com VDSS 650 V RDS(ON) MAX 99 mW @ 10 V ID MAX 30 A D G S POWER MOSFET D G S D2−PAK CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FCB 099N65S3 $Y &Z &3 &K FCB099N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 1 February, 2020 − Rev. 0 Publication Order Number: FCB099N65S3/D FCB099N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage − DC − AC (f > 1 Hz) 650 V ±30 V ±30 ID Drain Current − Continuous (TC = 25°C) 30 − Continuous (TC = 100°C) 19 IDM Drain Current − Pulsed (Note 1) 75 EAS Single Pulsed Avalanche Energy (Note 2) 145 IAS Avalanche Current (Note 2) 4.4 EAR Repetitive Avalanche Energy (Note 1) 2.27 dv/dt MOSFET dv/dt 100 A A mJ A mJ V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) − Derate Above 25°C 227 W 1.82 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 4.4 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 15 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC RqJA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. Value 0.55 40 Unit _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping† FCB099N65S3 FCB099N65S3 D2−PAK 330 mm 24 mm 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FCB099N65S3 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS / DTJ Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 1 mA, TJ = 25_C VGS = 0 V, ID = 1 mA, TJ = 150_C ID = 1 mA, Referenced to 25_C 650 700 0.68 V V V/_C IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ON CHARACTERISTICS VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V 1 mA 1.4 ±100 nA VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS VGS = VDS, ID = 0.74 mA VGS = 10 V, ID = 15 A VDS = 20 V, ID = 15 A 2.5 4.5 V 79 99 mW 19 S Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz 2480 pF Coss Output Capacitance 55 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 544 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 78 pF Qg(tot) Total Gate Charge at 10 V VDS = 400 V, ID = 15 A, VGS = 10 V 61 nC (Note 4) Qgs Gate to Source Gate Charge 15 nC Qgd Gate to Drain “Miller” Charge 25 nC ESR Equivalent Series Resistance f = 1 MHz 0.4 W SWITCHING CHARACTERISTICS td(on) tr Turn-On Delay Time Turn-On Rise Time VDD = 400 V, ID = 15 A, VGS = 10 V, 23 ns Rg = 4.7 W (Note 4) 24 ns td(off) Turn-Off Delay Time 60 ns tf Turn-Off Fall Time 5 ns SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source to Drain Diode Forward Current 30 A ISM Maximum Pulsed Source to Drain Diode Forward Current 75 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 15 A 1.2 V trr Reverse Recovery Time Qrr .


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