Small Signal MOSFET
NTK3142P
Small Signal MOSFET
−20 V, −280 mA, P−Channel with ESD Protection, SOT−723
Features
• Enables High Density PCB...
Description
NTK3142P
Small Signal MOSFET
−20 V, −280 mA, P−Channel with ESD Protection, SOT−723
Features
Enables High Density PCB Manufacturing 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 Low Voltage Drive Makes this Device Ideal for Portable Equipment Low Threshold Levels, 1.8 V RDS(on) Rating Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology.
This is a Pb−Free Device
Applications
Interfacing, Switching High Speed Switching Cellular Phones, PDA’s
http://onsemi.com
V(BR)DSS −20 V
RDS(on) TYP 2.7 W @ −4.5 V
4.1 W @ −2.5 V 6.1 W @ −1.8 V
ID Max −280 mA
SOT−723 (3−LEAD) 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Continuous Drain Current (Note 2)
Power Dissipation (Note 2)
Steady State tv5s Steady State tv5s
Steady State
TA = 25°C TA = 85°C TA = 25°C
TA = 25°C
TA = 25°C TA = 85°C TA = 25°C
VDSS VGS ID
PD ID PD
−20 V ±8.0 V −260 −185 mA −280 400
mW 500 −215
mA −155 280 mW
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IDM TJ, TSTG IS
TL
−310 mA
−55 to 150
°C
−240 mA
260 °C
Stresses e...
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