FCPF190N65S3R0L

MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mW FCPF190N65S3R0L Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features 700 V @ TJ = 150°C Typ. RDS(on) = 159 mW Ultra Low Gate Charge (Typ. Qg = 33 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF) 100% Avalanche Tested This Device is Pb−Free and is RoHS Compliant Applications Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter www.onsemi.com VDSS 650 V RDS(on) MAX 190 mΩ @ 10 V D ID MAX 17 A G S GDS TO−220 CASE 340BF MARKING DIAGRAM $Y&Z&3&K FCPF190 N65S3R0 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCPF190N65S3R0 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 1 September, 2019 − Rev. 7 Publication Order Number: FCPF190N65S3R0L/D FCPF190N65S3R0L ABSOLUTE MAXIMUM RATINGS (TC = 25°C un...